ace46 06t b 30v complementary enhancement mode field effect transistor ver 1. 1 1 d escription the ace4606tb uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used in inverter and other applications. features n - channel ? v ds =30v ? i d = 7 a ? r ds(on) < 26m (v gs =10v) ? r ds(on ) < 45m (v gs =4.5v) p - channel ? v ds = - 30v ? i d = - 4 a ? r ds(on) < 58 m (v gs = - 10v) ? r ds(on) < 80 m (v gs = - 4.5v) absolute maximum ratings p arameter s ymbol n - channel p - channel u nit drain - source voltage v ds s 30 - 30 v gate - source voltage v gs s 20 20 v drain current ( continuous)*ac t a =25c i d 7 - 4 a t a =70c 6 - 3 drain current (pulse) *b i dm 28 - 16 power dissipation t a =25c p d 2 w t a =70c 0.8 operating temperature/ storage temperature t j, t stg - 55 to 150 o c a: the value of r ja is measured with the device mo unted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c: the current rating is based on the t 10s junction to ambient thermal resistance rating.
ace46 06t b 30v complementary enhancement mode field effect transistor ver 1. 1 2 packaging type so p - 8 ordering i nformation ace4606t b xx + h fm : sop - 8 pb - free halogen - free
ace46 06t b 30v complementary enhancement mode field effect transistor ver 1. 1 3 n - channel electrical characteristics t a =2 5 o c un less otherwise noted pa rameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0 v, i d =250ua 30 v zero gate voltage drain current i dss v ds = 2 4 v, v gs =0v 1 ua gate threshold voltage v gs(th) v ds =v gs , i d s = 250 ua 1 1.5 3 v gate leakage c urrent i gss v gs = 20 v, v ds =0v 100 n a static drain - source on - resistance r ds(on) v gs = 10 v, i d = 5 a 23 26 m v gs = 4.5 v, i d = 5a 34 45 forward transconductance g fs v ds = 5 v, i d = 7 a 14 s diode forward voltage v sd i s =1a, v gs =0v 1.2 v maximum body - diode continuous current i s 7 a switching total gate charge q g v gs =10 v, v ds =1 5v, i d =7a 11.5 nc gate - sourc e charge q gs 1.6 gate - drain charge q gd 2.8 turn - on delay time t d (on) v gs = 10 v , v d s = 10v i d = 1a , r gs = 6 11 ns turn - on rise time t r 16 turn - off delay time t d(off) 36 turn - off fall time t f 20 dynamic input capacitance c iss v gs =0v , v ds =1 5 v f= 1m hz 520 pf output capacitance c oss 88 reverse transfer capacitance c rss 62
ace46 06t b 30v complementary enhancement mode field effect transistor ver 1. 1 4 p- channel electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit static drain - source br eakdown voltage v (br)dss v gs =0 v, i d = - 250ua - 30 v zero gate voltage drain current i dss v ds = - 24 v, v gs =0v - 1 ua gate threshold voltage v gs(th) v ds =v gs , i d s = - 250 ua - 1 - 1.5 - 3 v gate leakage current i gss v gs = 20 v, v ds =0v 100 n a static drain - source on - resistance r ds(on) v gs = - 10 v, i d = - 4 a 52 58 m v gs = - 4.5 v, i d = - 3 a 67 80 forward transconductance g fs v ds = - 5 v, i d = - 4 a 10 s diode forward voltage v sd i s = - 1a, v gs =0v - 1.1 v maximum body - diode continuous current i s - 4 a switching total gate cha rge q g v gs = - 10 v, v ds = - 1 5 v, i d = - 4 a 11.5 nc gate - source charge q gs 2.5 gate - drain charge q gd 2.2 turn - on delay time t d (on) v gs = - 10 v , v d s = - 15v i d = 1a , r gs = 6 10 ns turn - on rise time t r 10 turn - off delay time t d(off) 18 turn - off fal l time t f 15 dynamic input capacitance c iss v gs =0 v, v ds = - 1 5 v f= 1m hz 726 pf output capacitance c oss 90 reverse transfer capacitance c rss 76
ace46 06t b 30v complementary enhancement mode field effect transistor ver 1. 1 5 n - channel typical performance characteristics
ace46 06t b 30v complementary enhancement mode field effect transistor ver 1. 1 6
ace46 06t b 30v complementary enhancement mode field effect transistor ver 1. 1 7 p- channel typical performance characteristics
ace46 06t b 30v complementary enhancement mode field effect transistor ver 1. 1 8
ace46 06t b 30v complementary enhancement mode field effect transistor ver 1. 1 9 packing information so p - 8 units: mm
ace46 06t b 30v complementary enhancement mode field effect transistor ver 1. 1 10 notes ace does not assu me any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or sy stems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a si gnificant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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